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MMBF0202PLT1 Datasheet, PDF (1/8 Pages) Motorola, Inc – P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
MMBF0202PLT1
Preferred Device
Power MOSFET
300 mAmps, 20 Volts
P–Channel SOT–23
These miniature surface mount MOSFETs low RDS(on) assure
minimal power loss and conserve energy, making these devices ideal
for use in small power management circuitry. Typical applications are
dc–dc converters, power management in portable and
battery–powered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
• Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Miniature SOT–23 Surface Mount Package Saves Board Space
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Drain–to–Source Voltage
Gate–to–Source Voltage – Continuous
Drain Current
– Continuous @ TA = 25°C
– Continuous @ TA = 70°C
– Pulsed Drain Current (tp ≤ 10 µs)
Total Power Dissipation @ TA = 25°C
(Note 1.)
VDSS
20
VGS
± 20
ID
300
ID
240
IDM
750
PD
225
Operating and Storage Temperature
Range
TJ, Tstg – 55 to
150
Thermal Resistance – Junction–to–Ambient RθJA
625
Maximum Lead Temperature for Soldering
TL
260
Purposes, 1/8″ from case for 10
seconds
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
Unit
Vdc
Vdc
mAdc
mW
°C
°C/W
°C
http://onsemi.com
300 mAMPS
20 VOLTS
RDS(on) = 1.4 W
P–Channel
3
1
2
MARKING
DIAGRAM
3
SOT–23
P3
CASE 318
W
1
STYLE 21
2
W
= Work Week
PIN ASSIGNMENT
Drain
3
1
2
Gate
Source
ORDERING INFORMATION
Device
Package
Shipping
MMBF0202PLT1 SOT–23 3000 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2000
1
November, 2000 – Rev. 1
Publication Order Number:
MMBF0202PLT1/D