MMBF0202PLT1 Datasheet, PDF (2/8 Pages) Motorola, Inc – P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET

MMBF0202PLT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 µA)
Zero Gate Voltage Drain Current
(VDS = 16 Vdc, VGS = 0 Vdc)
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 200 mAdc)
(VGS = 4.5 Vdc, ID = 50 mAdc)
Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = 5.0 V)
(VDS = 5.0 V)
Transfer Capacitance
(VDG = 5.0 V)
V(BR)DSS 20
IDSS
–
–
IGSS
–
VGS(th)
1.0
rDS(on)
–
–
gFS
–
Ciss
–
Coss
–
Crss
–
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VDD = –15 Vdc,
RL = 75 Ω, ID = 200 mAdc,
VGEN = –10 V, RG = 6.0 Ω)
Gate Charge (See Figure 5)
(VDS = 16 V, VGS = 10 V,
ID = 200 mA)
td(on)
–
tr
–
td(off)
–
tf
–
QT
–
SOURCE–DRAIN DIODE CHARACTERISTICS
Continuous Current
IS
–
Pulsed Current
ISM
–
Forward Voltage (Note 2.)
VSD
–
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
Typ
Max
Unit
–
–
Vdc
µAdc
–
1.0
–
10
–
±100
nAdc
1.7
2.4
Vdc
Ohms
0.9
1.4
2.0
3.5
600
–
mMhos
50
–
pF
45
–
20
–
2.5
–
ns
1.0
–
16
–
8.0
–
2700
–
pC
–
0.3
A
–
0.75
1.5
–
V
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