MJF15030_13 Datasheet, PDF (3/6 Pages) ON Semiconductor – Complementary Power Transistors

MJF15030 (NPN), MJF15031 (PNP)
20
10
5
3
2
1
0.5
0.3
0.2
0.1
0.05
0.03
0.02
2
100 ms
5 ms
dc
WIREBOND LIMIT
THERMAL LIMIT
SECONDARY BREAKDOWN
LIMIT @ T_C = 25°C
3 5 7 10
20 30 50 70 100 150200
V_CE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 2. Forward Bias Safe Operating Area
8
5
3
2 ^{IC/IB = 10}
T_C = 25°C
1
V_BE(off) = 9 V
5V
3V
1.5 V
0
0V
0 100 110 120 130 140 150
V_CE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 3. Reverse Bias Switching Safe
Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I_C − V_CE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 2 and 3 is based on T_J(pk) = 150_C;
T_C is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided T_J(pk)
< 150_C. T_J(pk) may be calculated from the data in
Figure 1. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
1000
500
200
100
50
30
20
10
1.5
C_ib (NPN)
C_ib (PNP)
C_ob (PNP)
C_ob (NPN)
3 5 7 10
30 50
V_R, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitances
100 150
100
50
30
PNP
20
V_CE = 10 V
I_C = 0.5 A
T_C = 25°C
NPN
10
5
0.5 0.7 1
2
3
5 7 10
f, FREQUENCY (MHz)
Figure 5. Small−Signal Current Gain
100
90
(PNP)
60
(NPN)
50
20
10
0
0.1
0.2
0.5
1
2
5
10
I_C, COLLECTOR CURRENT (AMP)
Figure 6. Current Gain — Bandwidth Product
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