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MJF15030_13 Datasheet, PDF (2/6 Pages) ON Semiconductor – Complementary Power Transistors
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MJF15030 (NPN), MJF15031 (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 3)
(IC = 10 mAdc, IB = 0)
Collector Cutoff Current
(VCE = 150 Vdc, IB = 0)
Collector Cutoff Current
(VCB = 150 Vdc, IE = 0)
Emitter Cutoff Current
(VBE = 5 Vdc, IC = 0)
ON CHARACTERISTICS (Note 3)
DC Current Gain (IC = 0.1 Adc, VCE = 2 Vdc)
(IC = 2 Adc, VCE = 2 Vdc)
(IC = 3 Adc, VCE = 2 Vdc)
(IC = 4 Adc, VCE = 2 Vdc)
DC Current Gain Linearity
(VCE from 2 V to 20 V, IC from 0.1 A to 3 A) (NPN to PNP)
Collector−Emitter Saturation Voltage
(IC = 1 Adc, IB = 0.1 Adc)
Base−Emitter On Voltage
(IC = 1 Adc, VCE = 2 Vdc)
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product (Note 4)
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 10 MHz)
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
4. fT = ⎪hfe⎪• ftest.
Symbol
VCEO(sus)
ICEO
ICBO
IEBO
hFE
hFE
VCE(sat)
VBE(on)
fT
Min
Max
150
−
−
10
−
10
−
10
40
−
40
−
40
−
20
−
Typ
2
3
−
0.5
−
1
30
−
Unit
Vdc
mAdc
mAdc
mAdc
−
Vdc
Vdc
MHz
1
0.5
0.3
0.2
0.1
0.05
0.03
0.02
0.01
0.1
0.2 0.3 0.5
SINGLE PULSE
RqJC(t) = r(t) RqJC
TJ(pk) - TC = P(pk) RqJC(t)
1
23 5
10
20 30 50 100 200 300 500 1K 2K 3K 5K 10K
t, TIME (ms)
Figure 1. Thermal Response
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