MJE700 Datasheet, PDF (3/6 Pages) Motorola, Inc – 4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

1.0
0.7
D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1
0.05
0.07 _0.01
0.05
0.03 SINGLE PULSE
0.02
0.01
0.01 0.02 0.03 0.05 0.1
MJE700,T MJE702 MJE703 MJE800,T MJE802 MJE803
θ_JC(t) = r(t) θ_JC
θ_JC = 3.12°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) θ_JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.2 0.3 0.5 1.0
2.0 3.0 5.0 10
t, TIME (ms)
20 30 50
Figure 5. Thermal Response (MJE700, 800 Series)
100 200 300 500 1000
ACTIVE–REGION SAFE–OPERATING AREA
10
7.0
5.0
5.0 ms
1.0 ms
100 µs
10
7.0
5.0
5.0 ms
1.0 ms
3.0
2.0
dc
3.0
2.0
dc
100 µs
1.0
0.7
0.5
0.3
0.2
0.1
5.0
TJ = 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED
@ TC = 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
MJE702, 703
MJE700
7.0 10
20 30
50 70 100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 6. MJE700 Series
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
1.0
0.7
0.5
0.3
0.2
0.1
5.0
TJ = 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED
@ TC = 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
MJE802, 803
MJE800
7.0 10
20 30
50 70 100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 7. MJE800 Series
The data of Figures 6 and 7 are based on TJ(pk) = 150_C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150_C. TJ(pk) may be calculated from the data in Figure 4
or 5. At high case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the
limitations imposed by second breakdown.
10
100 µs
5.0
1.0 ms
5.0 ms
2.0
dc
1.0
TJ = 150°C
BONDING WIRE LIMITED
0.5
THERMALLY LIMITED
@ TC = 25°C (SINGLE PULSE)
0.2
SECOND BREAKDOWN LIMITED
10
100 µs
5.0
1.0 ms
5.0 ms
2.0
dc
1.0
TJ = 150°C
BONDING WIRE LIMITED
0.5
THERMALLY LIMITED
@ TC = 25°C (SINGLE PULSE)
0.2
SECOND BREAKDOWN LIMITED
0.1
5.0 7.0 10
20 30
50 70 100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 8. MJE700T
0.1
5.0 7.0 10
20 30
50 70 100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 9. MJE800T
Motorola Bipolar Power Transistor Device Data
3