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MJE700 Datasheet, PDF (1/6 Pages) Motorola, Inc – 4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Plastic Darlington
Complementary Silicon Power
Transistors
. . . designed for general–purpose amplifier and low–speed switching applications.
• High DC Current Gain —
hFE = 2000 (Typ) @ IC = 2.0 Adc
• Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage
Multiplication
• Choice of Packages —
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MJE700 and MJE800 series
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ T0220AB, MJE700T and MJE800T
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current
Symbol
VCEO
VCB
VEB
IC
IB
MJE700,T
MJE800,T
60
MJE702
MJE703
MJE802
MJE803
80
60
80
5.0
4.0
0.1
CASE 77 TO–220
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Power Dissipation @ TC = 25_C
PD
Derate above 25_C
40
50
0.32
0.40
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Temperature Range
TJ, Tstg
– 55 to + 150
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic
Symbol
Max
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction to Case
RθJC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ CASE 77
3.13
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ TO–220
2.50
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Unit
_C/W
50
40
TO–220AB
30
TO–126
20
10
REV 3
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
Order this document
by MJE700/D
PNP
MJE700,T
MJE702
MJE703
NPN
MJE800,T
MJE802
MJE803
4.0 AMPERE
DARLINGTON
POWER TRANSISTORS
COMPLEMENTARY
SILICON
40 WATT
50 WATT
CASE 77–08
TO–225AA TYPE
MJE700 – 703
MJE800 – 803
CASE 221A–06
TO–220AB
MJE700T
MJE800T
1