MJE700 Datasheet, PDF (2/6 Pages) Motorola, Inc – 4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{MJE700,T MJE702 MJE703 MJE800,T MJE802 MJE803}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Characteristic}
Symbol
Min
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{OFF CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Breakdown Voltage (1)
(IC = 50 mAdc, IB = 0)
MJE700,T, MJE800,T V(BR)CEO
60
MJE702, MJE703, MJE802, MJE803
80
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Cutoff Current}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(VCE = 60 Vdc, IB = 0)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{(VCE = 80 Vdc, IB = 0)}
ICEO
MJE700,T, MJE800,T
—
MJE702, MJE703, MJE802, MJE803
—
Collector Cutoff Current (VCB = Rated BVCEO, IE = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Cutoff Current (VCB = Rated BVCEO, IE = 0, TC = 100_C)}
ICBO
—
—
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)}
IEBO
—
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{ON CHARACTERISTICS}
DC Current Gain (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(IC = 1.5 Adc, VCE = 3.0 Vdc)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 2.0 Adc, VCE = 3.0 Vdc)
(IC = 4.0 Adc, VCE = 3.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Emitter Saturation Voltage (1)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(IC = 1.5 Adc, IB = 30 mAdc)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{(IC = 2.0 Adc, IB = 40 mAdc)}
(IC = 4.0 Adc, IB = 40 mAdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Base–Emitter On Voltage (1)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{(IC = 1.5 Adc, VCE = 3.0 Vdc)}
(IC = 2.0 Adc, VCE = 3.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(IC = 4.0 Adc, VCE = 3.0 Vdc)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DYNAMIC CHARACTERISTICS
hFE
MJE700,T, MJE702, MJE800,T, MJE802
750
MJE703, MJE803
750
All devices
100
VCE(sat)
MJE700,T, MJE702, MJE800,T, MJE802
—
MJE703, MJE803
—
All devices
—
VBE(on)
MJE700,T, MJE702, MJE800,T, MJE802
—
MJE703, MJE803
—
All devices
—
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{v v} ^{Small–Signal Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.}
hfe
1.0
Max
Unit
—
Vdc
—
µAdc
100
100
100
µAdc
500
2.0
mAdc
—
—
—
—
Vdc
2.5
2.8
3.0
Vdc
2.5
2.5
3.0
—
—
4.0
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1, MUST BE FAST RECOVERY TYPE, e.g.:
VCC
– 30 V
VCC = 30 V IB1 = IB2
ts
IC/IB = 250 TJ = 25°C
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
2.0
RC _SCOPE
TUT
V2
RB
APPROX
1.0
tf
+ 8.0 V
0.8
0
51 D1
≈ 6.0 k ≈ 150
0.6
tr
V1
APPROX
–12 V
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
25 µs
+ 4.0 V
For td and tr, D1 id disconnected
and V2 = 0, RB and RC are varied
to obtain desired test currents.
For NPN test circuit, reverse diode,
polarities and input pulses.
0.4
0.2
0.04 0.06
td @ VBE(off) = 0
PNP
NPN
0.1
0.2
0.4 0.6 1.0 2.0
4.0
IC, COLLECTOR CURRENT (AMP)
Figure 2. Switching Times Test Circuit
Figure 3. Switching Times
1.0
0.7 _{D = 0.5}
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.01
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.02
0.05 0.1
Z_θJC(t) = r(t) R_θJC
R_θJC = 2.50°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) Z_θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.2
0.5 1.0 2.0
5.0 10 20
50
t, TIME (ms)
Figure 4. Thermal Response (MJE700T, 800T Series)
100 200
500 1.0 k
2
Motorola Bipolar Power Transistor Device Data