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MBT6429DW1T1G Datasheet, PDF (3/5 Pages) ON Semiconductor – Amplifier Transistors | |||
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MBT6429DW1T1G
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
30
BANDWIDTH = 1.0 Hz
20
IC = 10 mA
RS â 0
NOISE VOLTAGE
30
BANDWIDTH = 1.0 Hz
20
RS â 0
3.0 mA
10
1.0 mA
7.0
5.0
f = 10 Hz
10
100 Hz
7.0
10 kHz
1.0 kHz
5.0
3.0
10 20
300 mA
50 100 200 500 1âk 2âk 5âk 10âk 20âk 50âk 100âk
f, FREQUENCY (Hz)
Figure 2. Effects of Frequency
3.0
0.01 0.02
100 kHz
0.05 0.1 0.2 0.5 1.0 2.0
IC, COLLECTOR CURRENT (mA)
5.0 10
Figure 3. Effects of Collector Current
10
7.0
BANDWIDTH = 1.0 Hz
5.0
IC = 10 mA
3.0
2.0
3.0 mA
1.0
1.0 mA
0.7
0.5
300 mA
0.3
100 mA
0.2
RS â 0
0.1
10 20 50
10 mA
30 mA
100 200 500 1âk 2âk 5âk 10âk 20âk
f, FREQUENCY (Hz)
50âk 100âk
Figure 4. Noise Current
20
16
BANDWIDTH = 10 Hz to 15.7 kHz
12
IC = 1.0 mA
8.0
500 mA
100 mA
4.0
10 mA
0
10 20
50 100 200 500 1âk 2âk 5âk 10âk 20âk 50âk 100âk
RS, SOURCE RESISTANCE (OHMS)
Figure 5. Wideband Noise Figure
100 Hz NOISE DATA
300
20
200 BANDWIDTH = 1.0 Hz
IC = 10 mA
100
100 mA
16
70
3.0 mA
50
12
1.0 mA
30
300 mA
20
30 mA
8.0
IC = 10 mA
3.0 mA
1.0 mA
300 mA
10
7.0
5.0
3.0
10 20
10 mA
50 100 200 500 1âk 2âk 5âk 10âk 20âk 50âk 100âk
RS, SOURCE RESISTANCE (OHMS)
100 mA
4.0
30 mA
10 mA
BANDWIDTH = 1.0 Hz
0
10 20 50 100 200 500 1âk 2âk 5âk 10âk 20âk 50âk 100âk
RS, SOURCE RESISTANCE (OHMS)
Figure 6. Total Noise Voltage
Figure 7. Noise Figure
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