MBT6429DW1T1G Datasheet, PDF (1/5 Pages) ON Semiconductor – Amplifier Transistors

MBT6429DW1T1G
Amplifier Transistors
NPN Silicon
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
http://onsemi.com
(3)
(2)
(1)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
V_CEO
V_CBO
V_EBO
I_C
45
Vdc
55
Vdc
6.0
Vdc
200
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation (Note 1)
T_A = 25°C
Thermal Resistance,
Junction−to−Ambient
P_D
R_qJA
mW
150
833
°C/W
Junction and Storage Temperature
T_J, T_stg − 55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
recommended foot print.
(4)
(5)
(6)
SC−88
(SOT−363)
1
CASE 419B
MARKING DIAGRAM
1T M G
G
1
1T
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
MBT6429DW1T1G SC−88
(Pb−Free)
3000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
1
October, 2009 − Rev. 3
Publication Order Number:
MBT6429DW1T1/D