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| MBT6429DW1T1G Datasheet, PDF (2/5 Pages) ON Semiconductor – Amplifier Transistors | |||
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MBT6429DW1T1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector âEmitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Collector âBase Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
Collector Cutoff Current
(VCE = 30 Vdc)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = 0.01 mAdc, VCE = 5.0 Vdc)
(IC = 0.1 mAdc, VCE = 5.0 Vdc)
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)
Collector âEmitter Saturation Voltage
(IC = 10 mAdc, IB = 0.5 mAdc)
(IC = 100 mAdc, IB = 5.0 mAdc)
Base âEmitter On Voltage
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
SMALLâSIGNAL CHARACTERISTICS
Current âGain â Bandwidth Product
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Symbol
Min
Max
Unit
V(BR)CEO
V(BR)CBO
ICES
ICBO
IEBO
Vdc
45
â
Vdc
55
â
mAdc
â
0.1
mAdc
â
0.01
mAdc
â
0.01
hFE
VCE(sat)
VBE(on)
â
500
â
500 1250
500
â
500
â
Vdc
â
0.2
â
0.6
Vdc
0.56 0.66
fT
Cobo
Cibo
MHz
100
700
pF
â
3.0
pF
â
8.0
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
http://onsemi.com
2
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