MBRS410ET3_05 Datasheet, PDF (3/4 Pages) ON Semiconductor – Surface Mount Schottky Power Rectifier

MBRS410ET3
9
8
dc
7
6
RATED VOLTAGE
APPLIED
R_qJL = 12 °C/W
T_J = 125°C
5
SQUARE WAVE
4
3
2
1
0
100 110
120
130
140
150
160
T_L, LEAD TEMPERATURE (°C)
Figure 5. Current Derating, Junction−to−Lead
3.5
dc
3
T_J = 125°C
2.5
2
SQUARE WAVE
1.5
1
0.5
0
01 2 3 4 5 6 7 8 9
I_F(AV), AVERAGE FORWARD CURRENT (A)
Figure 6. Forward Power Dissipation
100
D = 0.5
0.2
0.1
10
0.05
0.02
0.01
1
SINGLE PULSE
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
t, TIME (S)
Figure 7. Thermal Response, Junction−to−Ambient (min pad)
100
1000
100
D = 0.5
0.2
10
0.1
0.05
0.02
1
0.01
SINGLE PULSE
0.1
0.00001 0.0001
0.001
0.01
0.1
1
10
t, TIME (S)
Figure 8. Thermal Response, Junction−to−Ambient (1 inch pad)
100
1000
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3