MBRS410ET3_05 Datasheet, PDF (2/4 Pages) ON Semiconductor – Surface Mount Schottky Power Rectifier

MBRS410ET3
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Lead
Thermal Resistance,
Junction−to−Ambient
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 1)
Symbol
R_qJL
R_qJA
V_F
(I_F = 2.0 A)
(I_F = 4.0 A)
(I_F = 8.0 A)
Maximum Instantaneous Reverse Current (Note 1)
I_R
(Rated dc Voltage, V_R = 5.0 V)
(Rated dc Voltage, V_R = 10 V)
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Mounted with Minimum Recommended Pad Size, PC Board FR4.
100
V_F @ 125°C
10
100°C
75°C
100
25°C
−40°C
10
5 mm x 5 mm
(Note 2)
12
109
1 Inch x 1/2 inch
7.0
59
Unit
°C/W
T_J = 25°C
0.475
0.500
0.525
T_J = 25°C
50
150
T_J = 100°C
V
0.370
0.395
0.430
T_J = 100°C
mA
2000
4000
V_F @ 125°C
100°C
75°C
25°C
1
1
0.1
0.1 0.2
0.3
0.4
0.5
0.6
0.7
V_F, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage
0.1
0.1 0.2
0.3
0.4
0.5
0.6 0.7
V_F, MAXIMUM INSTANTANEOUS FORWARD
VOLTAGE (V)
Figure 2. Maximum Forward Voltage
1.0E−02
1.0E−03
I_R @ 125°C
100°C
10,000
25°C
f = 1 MHz
1.0E−04
75°C
1.0E−05
1.0E−06
25°C
1.0E−07
1000
0
2
4
6
8
10
0
2
4
6
8
10
V_R, REVERSE VOLTAGE (V)
V_R, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
Figure 4. Typical Capacitance
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