MBRM2H100T3G Datasheet, PDF (3/5 Pages) ON Semiconductor – Surface Mount Schottky Power Rectifier

MBRM2H100T3G, NRVBM2H100T3G
TYPICAL CHARACTERISTICS
100
100
150°C 125°C
25°C
10
10
150°C 125°C
25°C
1
1
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V_F, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
V_F, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2. Maximum Forward Voltage
10
1
0.1
0.01
0.001
0.0001
150°C
125°C
25°C
10
1
0.1
0.01
0.001
0.0001
150°C
125°C
25°C
0.00001
0
0.00001
10 20 30 40 50 60 70 80 90 100
0
V_R, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
10 20 30 40 50 60 70 80 90 100
V_R, REVERSE VOLTAGE (V)
Figure 4. Maximum Reverse Current
4.0
3.5 _dc
3.0
R_qJL = 12°C/W
2.5 _{Square Wave}
2.0
1.5
1.0
0.5
0
135 140 145 150 155 160 165 170 175
T_L, LEAD TEMPERATURE (°C)
Figure 5. Current Derating
3
2.8 _{TJ = 175°C}
2.6
2.4
2.2
Square Wave
2
1.8
1.6
dc
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3
I_O, AVERAGE FORWARD CURRENT (A)
Figure 6. Forward Power Dissipation
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3