MBRM2H100T3G Datasheet, PDF (2/5 Pages) ON Semiconductor – Surface Mount Schottky Power Rectifier

MBRM2H100T3G, NRVBM2H100T3G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V_RRM
V_RWM
V_R
100
V
Average Rectified Forward Current
(T_L = 160°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I_O
I_FSM
2.0
A
50
A
Storage and Operating Junction Temperature Range (Note 1)
T_stg, T_J
−65 to +175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dP_D/dT_J < 1/R_qJA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction−to−Lead (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 3)
ELECTRICAL CHARACTERISTICS
Y_JCL
R_qJA
R_qJA
12
°C/W
75
°C/W
260
°C/W
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 4)
(I_F = 1.0 A, T_J = 25°C)
(I_F = 2.0 A, T_J = 25°C)
(I_F = 1.0 A, T_J = 125°C)
(I_F = 2.0 A, T_J = 125°C)
V_F
V
0.76
0.84
0.61
0.68
Maximum Instantaneous Reverse Current (Note 4)
(Rated dc Voltage, T_J = 25°C)
(Rated dc Voltage, T_J = 125°C)
I_R
20
mA
1.0
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Mounted with 700 mm² copper pad size (Approximately 1 in²) 1 oz FR4 Board.
3. Mounted with pad size approximately 20 mm² copper, 1 oz FR4 Board.
4. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%.
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