MBRM110ET1G Datasheet, PDF (3/5 Pages) ON Semiconductor – Surface Mount Schottky Power Rectifier

MBRM110ET1G, NRVBM110ET1G
100E-3
10E-3
1E-3
100E-6
10E-6
1E-6
100E-9
10E-9
0
T_J = 150C
T_J = 100C
T_J = 25C
2.5
5
7.5
V_R, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
100E-3
10E-3
1E-3
100E-6
T_J = 150C
T_J = 100C
10E-6
1E-6
T_J = 25C
100E-9
10E-9
10
0
2.5
5
7.5
10
V_R, REVERSE VOLTAGE (VOLTS)
Figure 4. Maximum Reverse Current
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
25
dc
FREQ = 20 kHz
SQUARE WAVE
I_pk/I_o = p
I_pk/I_o = 5
I_pk/I_o = 10
I_pk/I_o = 20
45
65
85 105 125 145 165
T_L, LEAD TEMPERATURE (C)
Figure 5. Current Derating
0.7
dc
SQUARE
0.6
WAVE
I_pk/I_o = p
0.5
I_pk/I_o = 5
0.4
I_pk/I_o = 10
0.3
I_pk/I_o = 20
0.2
0.1
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
I_O, AVERAGE FORWARD CURRENT (AMPS)
Figure 6. Forward Power Dissipation
1000
T_J = 25C
100
10
0 1 2 3 4 5 6 7 8 9 10
V_R, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
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