MBRM110ET1G Datasheet, PDF (2/5 Pages) ON Semiconductor – Surface Mount Schottky Power Rectifier

MBRM110ET1G, NRVBM110ET1G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V_RRM
10
V
V_RWM
V_R
Average Rectified Forward Current
(T_L = 100C)
I_O
A
1.0
Non−Repetitive Peak Surge Current
(Non−Repetitive peak surge current, halfwave, single phase, 60 Hz)
I_FSM
A
50
Storage Temperature
T_stg
−55 to +150
C
Operating Junction Temperature
T_J
−55 to +150
C
Voltage Rate of Change
(Rated V_R, T_J = 25C)
dv/dt
V/ms
10,000
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead (Anode) (Note 1)
Thermal Resistance, Junction−to−Tab (Cathode) (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 1)
1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 8 and 9.
Symbol
R_tjl
R_tjtab
R_tja
Value
35
23
277
Unit
C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 2)
(I_F = 0.1 A)
(I_F = 1.0 A)
(I_F = 2.0 A)
Maximum Instantaneous Reverse Current (Note 2)
(V_R = 5.0 V)
(V_R = 10 V)
2. Pulse Test: Pulse Width  250 ms, Duty Cycle  2%.
Symbol
V_F
V_F
I_R
Value
T_J = 25C
0.455
0.530
0.595
T_J = 100C
0.360
0.455
0.540
T_J = 25C
T_J = 100C
0.5
300
1.0
500
Unit
V
V
mA
10
T_J = 150C
T_J = 100C
T_J = 25C
T_J = -40C
1.0
10
T_J = 150C
T_J = 100C
1.0
T_J = 25C
0.1
0.2
0.4
0.6
0.8
v_F, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
0.1
0.2
0.4
0.6
0.8
V_F, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 2. Maximum Forward Voltage
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