EMX1DXV6T1G Datasheet, PDF (3/4 Pages) ON Semiconductor – Dual NPN General Purpose Amplifier Transistor

EMX1DXV6T1G, EMX1DXV6T5G
TYPICAL ELECTRICAL CHARACTERISTICS
60
T_A = 25°C
50
40
30
20
10
160 mA
140 mA
120 mA
100 mA
80 mA
60 mA
40 mA
I_B = 20 mA
0
0
2
4
6
8
V_CE, COLLECTOR VOLTAGE (V)
Figure 1. I_C − V_CE
1000
100
10
0.1
T_A = 75°C
T_A = 25°C
T_A = - 25°C
V_CE = 10 V
1
10
100
I_C, COLLECTOR CURRENT (mA)
Figure 2. DC Current Gain
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0.0001
I_C = 100 mA 1 mA
10 mA
T_A = 25°C
50 mA 100 mA
0.001
0.01
0.1
1
10
I_B, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
20
900
800
700
600
500
400
300
T_A = 25°C
V_CE = 5 V
200
100
0
0.2 0.5 1 5 10 20 40 60 80 100 150 200
I_C, COLLECTOR CURRENT (mA)
Figure 4. On Voltage
7
18
6
5
16
4
14
3
12
2
10
1
0
1
2
3
4
0
10
20
30
40
V_EB (V)
V_CB (V)
Figure 5. Capacitance
Figure 6. Capacitance
www.onsemi.com
3