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EMX1DXV6T1G Datasheet, PDF (2/4 Pages) ON Semiconductor – Dual NPN General Purpose Amplifier Transistor
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EMX1DXV6T1G, EMX1DXV6T5G
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage
(IC = 50 mAdc, IE = 0)
V(BR)CBO
60
−
−
Vdc
Collector-Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
50
−
−
Vdc
Emitter-Base Breakdown Voltage
(IE = 50 mAdc, IE = 0)
V(BR)EBO
7.0
−
−
Vdc
Collector-Base Cutoff Current
(VCB = 60 Vdc, IE = 0)
ICBO
−
−
0.5
mA
Emitter-Base Cutoff Current
(VEB = 7.0 Vdc, IB = 0)
IEBO
−
−
0.5
mA
Collector-Emitter Saturation Voltage (Note 2)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
Vdc
−
−
0.4
DC Current Gain (Note 3)
(VCE = 6.0 Vdc, IC = 1.0 mAdc)
hFE
−
120
−
560
Transition Frequency
(VCE = 12 Vdc, IC = 2.0 mAdc, f = 30 MHz)
fT
−
180
−
MHz
Output Capacitance
(VCB = 12 Vdc, IC = 0 Adc, f = 1 MHz)
COB
−
2.0
−
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
3. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
ORDERING INFORMATION
Device
Package
Shipping†
EMX1DXV6T1G
SOT−563
(Pb−Free)
4000 Units / Tape & Reel
EMX1DXV6T5G
SOT−563
(Pb−Free)
8000 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
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