EMX1DXV6T1G Datasheet, PDF (1/4 Pages) ON Semiconductor – Dual NPN General Purpose Amplifier Transistor

EMX1DXV6T1G,
EMX1DXV6T5G
Dual NPN General Purpose
Amplifier Transistor
This NPN transistor is designed for general purpose amplifier
applications. This device is housed in the SOT-563 package which is
designed for low power surface mount applications, where board
space is at a premium.
Features
• Reduces Board Space
• High h_FE, 210 −460 (Typical)
• Low V_CE(sat), < 0.5 V
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T_A = 25°C)
Rating
Symbol
Collector-Base Voltage
V_(BR)CBO
Collector-Emitter Voltage
V_(BR)CEO
Emitter-Base Voltage
V_(BR)EBO
Collector Current − Continuous
I_C
Value
60
50
7.0
100
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation
T_A = 25°C
Derate above 25°C
Symbol
P_D
Max
357 (Note 1)
2.9 (Note 1)
Unit
mW
mW/°C
Thermal Resistance −
Junction-to-Ambient
R_qJA
350 (Note 1)
°C/W
Characteristic
(Both Junctions Heated)
Total Device Dissipation
T_A = 25°C
Derate above 25°C
Symbol
P_D
Max
500 (Note 1)
4.0 (Note 1)
Unit
mW
mW/°C
Thermal Resistance −
Junction-to-Ambient
R_qJA
250 (Note 1)
°C/W
Junction and Storage
Temperature Range
T_J, T_stg − 55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 @ Minimum Pad
www.onsemi.com
DUAL NPN GENERAL
PURPOSE AMPLIFIER
TRANSISTORS
SURFACE MOUNT
(6)
(5)
(4)
Tr₁
(1)
Tr₂
(2)
(3)
6
1
SOT−563
CASE 463A
STYLE 1
MARKING DIAGRAM
3X MG
G
1
3X = Specific Device Code
M = Month Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
1
April, 2016 − Rev. 2
Publication Order Number:
EMX1DXV6T1/D