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| DAP222M3T5G Datasheet, PDF (3/4 Pages) ON Semiconductor – Common Anode Silicon Dual Switching Diodes | |||
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DAP222M3T5G
TYPICAL ELECTRICAL CHARACTERISTICS
100
10
TA = 85°C
1.0
10
TA = â40°C
0.1
1.0
TA = 25°C
0.01
TA = 150°C
TA = 125°C
TA = 85°C
TA = 55°C
0.1
0.2
0.4
0.6
0.8
1.0
VF, FORWARD VOLTAGE (VOLTS)
Figure 1. Forward Voltage
0.001
1.2
0
TA = 25°C
10
20
30
40
50
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Reverse Current
1.75
1.5
1.25
1.0
0.75
0
2
4
6
8
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Diode Capacitance
RL
A
RECOVERY TIME EQUIVALENT TEST CIRCUIT
tr
tp
t
10%
90%
VR
tp = 2 ms
tr = 0.35 ns
INPUT PULSE
Figure 4. Reverse Recovery Time Test Circuit
trr
IF
t
Irr = 0.1 IR
IF = 5.0 mA
VR = 6 V
RL = 100 W
OUTPUT PULSE
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