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| DAP222M3T5G Datasheet, PDF (2/4 Pages) ON Semiconductor – Common Anode Silicon Dual Switching Diodes | |||
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DAP222M3T5G
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Condition
Reverse Voltage Leakage Current
Forward Voltage
Reverse Breakdown Voltage
Diode Capacitance
Reverse Recovery Time
IR
VF
VR
CD
trr
(Note 2)
VR = 70 V
IF = 100 mA
IR = 100 mA
VR = 6.0 V, f = 1.0 MHz
IF = 5.0 mA, VR = 6.0 V, RL = 100 W, Irr = 0.1 IR
2. trr Test Circuit for DAP222 in Figure 4.
Min
Max
Unit
â
0.1
mA
â
1.2
V
80
â
V
â
3.5
pF
â
4.0
ns
http://onsemi.com
2
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