DAP222M3T5G Datasheet, PDF (1/4 Pages) ON Semiconductor – Common Anode Silicon Dual Switching Diodes

DAP222M3T5G
Preferred Device
Product Preview
Common Anode Silicon
Dual Switching Diodes
These Common Anode Silicon Epitaxial Planar Dual Diodes are
designed for use in ultra high speed switching applications. The
DAP222 device is housed in the SOT−723 package which is designed
for low power surface mount applications, where board space is at a
premium.
• Fast t_rr
• Low C_D
• ESD Performance: Human Body Model; u 2000 V,
Machine Model u 200 V
• Available in 4 mm Tape and Reel
• This is a Pb−Free Device
MAXIMUM RATINGS (T_A = 25°C)
Rating
Symbol
Value
Unit
Reverse Voltage
V_R
80
V
Peak Reverse Voltage
V_RM
80
V
Forward Current
I_F
100
mA
Peak Forward Current
I_FM
300
mA
Peak Forward Surge Current
I_FSM
2.0
A
(Note 1)
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Power Dissipation
P_D
260
mW
Junction Temperature
T_J
150
°C
Storage Temperature
T_stg
−55 ~ + 150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. t = 1.0 mS.
http://onsemi.com
ANODE
3
1
2
CATHODE
MARKING
DIAGRAM
3
SOT−723
CASE 631AA
2
STYLE 4
P9 M
1
P9
= Specific Device Code
M
= Date Code
ORDERING INFORMATION
Device
Package
Shipping^†
DAP222M3T5G SOT−723 8000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2005
1
March, 2005 − Rev. 1
Publication Order Number:
DAP222M3/D