CM6114 Datasheet, PDF (3/4 Pages) ON Semiconductor – Single-Channel Transient Voltage Suppressor

T_A = 255C, 50 W Environment
0 dB
-10 dB
-20 dB
CM6114
RF CHARACTERISTICS
5V
0V
−30 dB
-40 dB
-50 dB
3
10
100
1000 2000
FREQUENCY (MHz)
Figure 1. Insertion Loss (0 V and 5 V Bias)
6000
MECHANICAL SPECIFICATION
Table 5. VERTICAL STRUCTURE DIMENSIONS (nominal)
Ref.
Parameter
Material
Dimension
a Die Thickness
Silicon
389 mm
h Dielectric Layer 1
Polyimide
7 mm
j Dielectric Layer 2
Polyimide
10 mm
UBM−(Ti/Cu)
Plated Cu
6.5 mm
d
Sputtered Cu
0.4 mm
Sputtered Ti
0.1 mm
e
UBM Wetting Area
Diameter
240 mm
b Bump Standoff
194 mm
f
Solder Bump Diameter
after Bump Reflow
270 mm
c Metal Pad Height
AlSiCu
1.5 mm
g Metal Pad Diameter
60 mm
D2
0.406 mm
D1 Total Thickness
0.600 mm
Vertical Structure Specification*
Figure 2. Sectional View
* Daisy Chain CM6040
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