CM6114 Datasheet, PDF (2/4 Pages) ON Semiconductor – Single-Channel Transient Voltage Suppressor

CM6114
ELECTRICAL SPECIFICATIONS AND CONDITIONS
Table 2. PARAMETERS AND OPERATING CONDITIONS
Parameter
Storage Temperature Range
Operating Temperature Range
Rating
–55 to +150
–30 to +85
Units
°C
°C
Table 3. ABSOLUTE RATINGS
Parameter
Failing to nonconductive, I²t − from A1 pin to device ground
(Maximum I_PP value using 10/1000 ms pulse). See Notes 1 and 2.
Failing to nonconductive, I²t − from A2 pin to device ground
(Maximum I_PP value using 10/1000 ms pulse). See Notes 1 and 2.
1. The device must not burn to open−circuit, when the value is below maximum I_PP.
2. This parameter is characterized at 25°C using an ON Semiconductor−specific test board.
Rating
4
100
Units
A
A
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Symbol
Parameter
Conditions
Min Typ Max Units
R
Resistance A1 − A2
B1 and B2 floating; T_A = 25°C
(Note 2)
50
mW
R_OPEN
t_FUSE
Resistance after open fuse
Fusing time
B1 and B2 floating; T_A = 25°C
1
B1 and B2 floating; I = 5 A; T_A = 25°C
(Note 3)
MW
100 ms
t_LIFE Fuse life time
B1 and B2 floating; I = 2 A; T_A = 25°C 4000
(Notes 3 and 4)
Hours
I_OFF Stand−off quiescent current
V_BR Break down voltage
V_CL Clamping voltage during transient
From A1 pin to B1 and B2 pins;
Stand−off voltage V_OFF = 8 V;
T_A = 25°C
From A1 pin to B1 and B2 pins;
10
Break down current I_BR = 15 mA
From A1 pin to B1 and B2 pins;
Clamping current I_CL = 1 A
(Note 5)
100
nA
V
13.5
V
V_F
C_L1
C_L2
V_ESD
Forward voltage
Line capacitance
ESD protection peak discharge
Voltage at A1 pin or A2 to B1 and B2
a) Contact Discharge per IEC 61000−4−2
standard
b) Air Discharge per IEC 61000−4−2 standard
From A1 pin to B1 and B2 pins;
Forward current I_F = 850 mA
V_BIAS = 0 V
V_BIAS = 5 V; T_A = 25°C
T_A = 25°C
(Note 6)
1.3
V
280
pF
108 135
pF
kV
±30
±30
f_C
Minimum attenuation
Freq = 80 MHz − 1 GHz
Freq = 1 − 4 GHz
R_SOURCE = R_LOAD = 50 W
T_A = 25°C
1. All parameters specified for T_A = −30°C to 85°C unless otherwise noted.
2. This parameter is measured using low current to avoid self−heating.
3. These parameters are characterized using ON Semiconductor−specific test boards.
4. Fuse is considered failed when its resistance is higher than 1 W.
5. Transient: 8 x 20 ms current pulse.
6. Standard IEC 61000−4−2 with C_Discharge = 150 pF, R_Discharge = 330 W.
dB
12
20
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