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CAV24C256WE-GT3 Datasheet, PDF (3/11 Pages) ON Semiconductor – 256-Kb I2C CMOS Serial EEPROM
CAV24C256
Table 5. A.C. CHARACTERISTICS (VCC = 2.5 V to 5.5 V, TA = −40°C to +125°C, unless otherwise specified.) (Note 7)
Standard
Fast
Fast−Plus
Symbol
Parameter
Min
Max
Min
Max
Min
Max
FSCL
Clock Frequency
100
400
1,000
tHD:STA
START Condition Hold Time
4
0.6
0.25
tLOW
Low Period of SCL Clock
4.7
1.3
0.45
tHIGH
High Period of SCL Clock
4
0.6
0.40
tSU:STA
START Condition Setup Time
4.7
0.6
0.25
tHD:DAT
Data In Hold Time
0
0
0
tSU:DAT
Data In Setup Time
250
100
50
tR (Note 8)
SDA and SCL Rise Time
1,000
300
100
tF (Note 8)
SDA and SCL Fall Time
300
300
100
tSU:STO
STOP Condition Setup Time
4
0.6
0.25
tBUF
Bus Free Time Between
4.7
1.3
0.5
STOP and START
tAA
SCL Low to Data Out Valid
3.5
0.9
0.40
tDH
Data Out Hold Time
50
50
50
Ti (Note 8)
Noise Pulse Filtered at SCL
50
50
50
and SDA Inputs
tSU:WP
tHD:WP
tWR
tPU
(Notes 8, 9)
WP Setup Time
WP Hold Time
Write Cycle Time
Power-up to Ready Mode
0
2.5
5
1
0
2.5
5
1
0
1
5
0.1
1
7. Test conditions according to “A.C. Test Conditions” table.
8. Tested initially and after a design or process change that affects this parameter.
9. tPU is the delay between the time VCC is stable and the device is ready to accept commands.
Table 6. A.C. TEST CONDITIONS
Input Levels
Input Rise and Fall Times
0.2 x VCC to 0.8 x VCC
≤ 50 ns
Input Reference Levels
0.3 x VCC, 0.7 x VCC
Output Reference Levels
Output Load
0.5 x VCC
Current Source: IL = 3 mA; CL = 100 pF
Units
kHz
ms
ms
ms
ms
ms
ns
ns
ns
ms
ms
ms
ns
ns
ms
ms
ms
ms
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