CAT5140 Datasheet, PDF (3/11 Pages) ON Semiconductor – Single Channel 256 Tap DPP with Integrated EEPROM and I2C Control

CAT5140
Table 5. POTENTIOMETER CHARACTERISTICS (Note 2) (V_CC = +2.5 V to +5.5 V, −40_C to +85_C unless otherwise specified.)
Limits
Parameter
Test Conditions
Symbol
Min
Typ
Max
Units
Potentiometer Resistance ‘−50’
Potentiometer Resistance ‘−00’
Potentiometer Resistance Tolerance
R_POT
R_POT
50
kW
100
kW
±20
%
Power Rating
25°C
50
mW
Wiper Current
Wiper Resistance
Integral Non−Linearity
I_W
I_W = ±3 mA
R_W
V_CC = 3.3 V
Voltage Divider Mode
INL
±3
mA
70
200
W
±1
LSB (Note 3)
Differential Non−Linearity
DNL
±0.5
LSB (Note 3)
Integral Non−Linearity
Resistor Mode
RINL
±1
LSB (Note 3)
Differential Non−Linearity
RDNL
±0.5
LSB (Note 3)
Voltage on R_H or R_L
Resolution
V_SS = 0 V
V_TERM
V_SS
V_CC
V
0.4
%
Zero Scale Error
0
0.5
2
LSB (Note 4)
Full Scale Error
−2
−0.5
0
LSB (Note 4)
Temperature Coefficient of R_POT
(Notes 5, 6)
TC_RPOT
±100
ppm/°C
Ratiometric Temp. Coefficient
(Notes 5, 6)
TC_RATIO
20
ppm/°C
Potentiometer Capacitances
(Notes 5, 6)
C_H/C_L/C_W
10/10/25
pF
Frequency Response
R_POT = 50 kW (Note 7)
fc
0.4
MHz
2. Latch−up protection is provided for stresses up to 100 mA on address and data pins from −1 V to V_CC +1 V.
3. LSB = R_TOT / 255 or (R_H − R_L) / 255, single pot.
4. V(R_W)₂₅₅−V(R_W)₀]/255 (R_W)₂₅₅ = 0xFF, (R_W)₀ = 0x00.
5. Absolute linearity is utilized to determine actual wiper voltage versus expected voltage as determined by wiper position when used as a
potentiometer.
6. Relative linearity is a measure of the error in step size. It is determined by the actual change in voltage between two successive tap positions
when used as a potentiometer.
7. This parameter is tested initially and after a design or process change that affects the parameter.
Table 6. D.C. OPERATING CHARACTERISTICS (V_CC = +2.5 V to +5.5 V, −40°C to +85°C unless otherwise specified.)
Parameter
Test Conditions
Symbol
Min
Max
Units
Power Supply Current
Volatile Write & Read
f_SCL = 400 kHz
V_CC = 5.5 V, Inputs = GND
I_CC1
1
mA
Power Supply Current
Non−volatile Write
Standby Current
Input Leakage Current
Output Leakage Current
f_SCL = 400 kHz
V_CC = 5.5 V, Inputs = GND
I_CC2
3
mA
V_CC = 5.0 V
I_SB
2
mA
V_IN = GND to V_CC
I_LI
−10
+10
mA
V_OUT = GND to V_CC
I_LO
10
mA
Input Low Voltage
Input High Voltage
SDA Output Buffer Low Voltage
Power−On Recall
V_IL
−1
V_CC x 0.3
V
V_IH
V_CC x 0.7
V_CC + 1.0
V
V_CC = 2.5 V, I_OL = 4 mA
V_OL1
0.4
V
Minimum V_CC for memory recall
V_POR
1.4
2.0
V
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