BCP68T1G_14 Datasheet, PDF (3/5 Pages) ON Semiconductor – NPN Silicon Epitaxial Transistor

1.0
T_J = 25°C
0.8
V_BE(sat) @ I_C/I_B = 10
BCP68T1G
TYPICAL ELECTRICAL CHARACTERISTICS
80
70
T_J = 25°C
0.6
V_BE(on) @ V_CE = 1.0 V
60
0.4
50
0.2
01.0
V_CE(sat) @ I_C/I_B = 10
10
100
1000
I_C, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltage
40
30
0
1.0
2.0
3.0
4.0
5.0
V_R, REVERSE VOLTAGE (V)
Figure 4. Capacitance
25
T_J = 25°C
20
15
10
5.0 ₀
5.0
10
15
20
V_R, REVERSE VOLTAGE (V)
Figure 5. Capacitance
1.0
T_J = 25°C
0.8
0.6
= 1000 mA
0.4 I _C = 10 mA = 50 mA = 100 mA
0.2
0
0.01
= 500 mA
0.1
1.0
10
100
I_B, BASE CURRENT (mA)
Figure 7. Saturation Region
- 0.8
-1.2
-1.6
R_qVB for V_BE
- 2.0
- 2.4
- 2.8
1.0
10
10
100
1000
I_C, COLLECTOR CURRENT (mA)
Figure 6. Base−Emitter Temperature
Coefficient
100 ms
1
1 ms
10 ms
0.1
1
10
100
V_CE, COLLECTOR EMITTER VOLTAGE (V)
Figure 8. Safe Operating Area
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