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BCP68T1G_14 Datasheet, PDF (2/5 Pages) ON Semiconductor – NPN Silicon Epitaxial Transistor
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BCP68T1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CES
25
−
Vdc
−
Collector−Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
20
−
Vdc
−
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector−Base Cutoff Current
(VCB = 25 Vdc, IE = 0)
V(BR)EBO
5.0
−
Vdc
−
ICBO
−
mAdc
−
10
Emitter−Base Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
IEBO
−
mAdc
−
10
ON CHARACTERISTICS
DC Current Gain
(IC = 5.0 mAdc, VCE = 10 Vdc)
(IC = 500 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
Collector−Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 100 mAdc)
hFE
50
85
60
VCE(sat)
−
−
−
−
−
375
−
−
Vdc
−
0.5
Base−Emitter On Voltage
(IC = 1.0 Adc, VCE = 1.0 Vdc)
VBE(on)
−
Vdc
−
1.0
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 5.0 Vdc)
fT
MHz
−
60
−
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
−
15
−
pF
Output Capacitance (VEB = 5 Vdc, IE = 0, f = 1.0 MHz)
Cibo
−
145
−
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
300
200
100
10
1.0
TYPICAL ELECTRICAL CHARACTERISTICS
300
TJ = 125°C
= 25°C
= - 55°C
VCE = 1.0 V
10
100
1000
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
200
100
70
VCE = 10 V
TJ = 25°C
50
f = 30 MHz
3010
100 200
1000
IC, COLLECTOR CURRENT (mA)
Figure 2. Current-Gain-Bandwidth Product
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