BCP68T1G_14 Datasheet, PDF (1/5 Pages) ON Semiconductor – NPN Silicon Epitaxial Transistor

BCP68T1G
NPN Silicon
Epitaxial Transistor
This NPN Silicon Epitaxial Transistor is designed for use in low
voltage, high current applications. The device is housed in the
SOT−223 package, which is designed for medium power surface
mount applications.
Features
• High Current
• The SOT−223 Package Can Be Soldered Using Wave or Reflow
• SOT−223 package ensures level mounting, resulting in improved
thermal conduction, and allows visual inspection of soldered joints.
The formed leads absorb thermal stress during soldering, eliminating
the possibility of damage to the die
• The PNP Complement is BCP69T1
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable*
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Collector Current − Peak (Note 2)
Base Current − Continuous
Base Current − Peak
Total Power Dissipation
@ T_A = 25°C (Note 1)
Derate above 25°C
V_CEO
V_CBO
V_EBO
I_C
I_CM
I_B
I_BM
P_D
20
Vdc
25
Vdc
5.0
Vdc
1.0
Adc
3.0
Adc
0.4
Adc
0.4
Adc
1.5
W
12
mW/°C
Operating and Storage Temperature
Range
T_J, T_stg − 65 to 150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.
x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
2. Reference SOA curve for IC peak.
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
Thermal Resistance, Junction−to−Ambient R_qJA
83.3
(Surface Mounted)
Lead Temperature for Soldering,
0.0625 in from case
Time in Solder Bath
T_L
260
10
Unit
°C/W
°C
Sec
http://onsemi.com
MEDIUM POWER NPN SILICON
HIGH CURRENT TRANSISTOR
SURFACE MOUNT
COLLECTOR 2,4
BASE
1
EMITTER 3
4
12 ₃
SOT−223
CASE 318E
STYLE 1
MARKING DIAGRAM
AYW
CA G
G
CA = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
BCP68T1G
SOT−223
(Pb−Free)
1,000/Tape & Reel
SBCP68T1G* SOT−223
(Pb−Free)
1,000/Tape & Reel
BCP68T3G
SOT−223
(Pb−Free)
4,000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
1
January, 2014 − Rev. 9
Publication Order Number:
BCP68T1/D