BC337_05 Datasheet, PDF (3/5 Pages) ON Semiconductor – Amplifier Transistors NPN Silicon

BC337, BC337−16, BC337−25, BC337−40, BC338−25
1000
1000
1.0 s
1.0 ms
T_J = 135°C
V_CE = 1 V
100 ms
T_J = 25°C
dc
T_C = 25°C
dc
100
T_A = 25°C
100
10
1.0
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
(APPLIES BELOW RATED V_CEO)
3.0
10
30
V_CE, COLLECTOR−EMITTER VOLTAGE
10
100
0.1
Figure 2. Active Region − Safe Operating Area
1.0
10
100
1000
I_C, COLLECTOR CURRENT (MA)
Figure 3. DC Current Gain
1.0
T_J = 25°C
0.8
0.6
0.4
I_C = 10 mA
100 mA 300 mA
500 mA
0.2
0
0.01
0.1
1
10
100
I_B, BASE CURRENT (mA)
Figure 4. Saturation Region
1.0
T_A = 25°C
0.8
0.6
V_BE(sat) @ I_C/I_B = 10
V_BE(on) @ V_CE = 1 V
0.4
0.2
V_CE(sat) @ I_C/I_B = 10
0
1
10
100
1000
I_C, COLLECTOR CURRENT (mA)
Figure 5. “On” Voltages
+1
q_VC for V_CE(sat)
0
−1
−2
q_VB for V_BE
1
10
100
1000
I_C, COLLECTOR CURRENT (mA)
Figure 6. Temperature Coefficients
100
10
1
0.1
C_ib
C_ob
1
10
100
V_R, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitances
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