BC337_05 Datasheet, PDF(2/5 Page) ON Semiconductor – Amplifier Transistors NPN Silicon

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BC337_05 Datasheet, PDF (2/5 Pages) ON Semiconductor – Amplifier Transistors NPN Silicon

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BC337, BC337â16, BC337â25, BC337â40, BC338â25

ELECTRICAL CHARACTERISTICS (TA = 25Â°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector âEmitter Breakdown Voltage

(IC = 10 mA, IB = 0)

BC338

BC337

Collector âEmitter Breakdown Voltage

(IC = 100 mA, IE = 0)

BC337

BC338

Emitter âBase Breakdown Voltage

(IE = 10 mA, IC = 0)

Collector Cutoff Current

(VCB = 30 V, IE = 0)

(VCB = 20 V, IE = 0)

Collector Cutoff Current

(VCE = 45 V, VBE = 0)

(VCE = 25 V, VBE = 0)

Emitter Cutoff Current

(VEB = 4.0 V, IC = 0)

ON CHARACTERISTICS

DC Current Gain

(IC = 100 mA, VCE = 1.0 V)

(IC = 300 mA, VCE = 1.0 V)

BC337

BC338

BC337

BC338

BC337

BC337â16

BC337â25/BC338â25

BC337â40

BaseâEmitter On Voltage

(IC = 300 mA, VCE = 1.0 V)

Collector âEmitter Saturation Voltage

(IC = 500 mA, IB = 50 mA)

SMALLâSIGNAL CHARACTERISTICS

Output Capacitance

(VCB = 10 V, IE = 0, f = 1.0 MHz)

Current âGain â Bandwidth Product

(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)

Symbol

V(BR)CEO

V(BR)CES

V(BR)EBO

ICBO

ICES

IEBO

hFE

VBE(on)

VCE(sat)

Cob

Min

Typ

Max Unit

5.0

Vdc

nAdc

100

nAdc

100

100 nAdc

100

630

100

250

160

400

250

630

1.2

Vdc

0.7

Vdc

210

MHz

1.0

0.7

D = 0.5

0.5

0.3

0.2

0.1

0.1 0.05

0.07 0.02

0.05

0.03

0.01

0.02

SINGLE PULSE

0.01

0.001 0.002

0.005 0.01 0.02

P(pk)

DUTY CYCLE, D = t1/t2

0.05 0.1 0.2

0.5 1.0 2.0

t, TIME (SECONDS)

Figure 1. Thermal Response

qJC(t) = (t) qJC

qJC = 100Â°C/W MAX

qJA(t) = r(t) qJA

qJA = 375Â°C/W MAX

D CURVES APPLY FOR

POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) â TC = P(pk) qJC(t)

5.0 10 20

50 100

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