BC337_05 Datasheet, PDF (1/5 Pages) ON Semiconductor – Amplifier Transistors NPN Silicon

BC337, BC337−16,
BC337−25, BC337−40,
BC338−25
Amplifier Transistors
NPN Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol BC337 BC338 Unit
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
Total Device Dissipation
@ T_A = 25°C
Derate above 25°C
V_CEO
V_CBO
V_EBO
I_C
P_D
45
25
50
30
5.0
800
625
5.0
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation
@ T_C = 25°C
Derate above 25°C
P_D
W
1.5
mW/°C
12
Operating and Storage Junction
Temperature Range
T_J, T_stg −55 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Ambient
R_qJA
200
°C/W
Thermal Resistance,
Junction−to−Case
R_qJC
83.3
°C/W
http://onsemi.com
COLLECTOR
1
2
BASE
3
EMITTER
1
23
TO−92
CASE 29
STYLE 17
MARKING
DIAGRAM
BC33
x−xx
AYWW G
G
BC33x−xx = Device Code
(Refer to page 4)
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
© Semiconductor Components Industries, LLC, 2005
1
September, 2005 − Rev. 5
Publication Order Number:
BC337/D