ATP613 Datasheet, PDF (3/7 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

ATP613
ID -- VDS
ID -- VGS
12
12
Tc=25°C
VDS=20V
10
15V
10
25°^C
10V
8
8
8V
75^°C
6
6
4
7V
4
2
6V
0
VGS=5V
0 2 4 6 8 10 12 14 16 18 20
Drain-to-Source Voltage, VDS -- V IT16201
RDS(on) -- VGS
5.0
ID=2.75A
4.5
Single pulse
4.0
3.5
3.0
2.5
Tc=75°C
2.0
25°C
1.5
--25°C
1.0
0.5
0
0
2
4
6
8
10
12
14 15
Gate-to-Source Voltage, VGS -- V IT16203
10
| yfs | -- ID
7
VDS=10V
5
3
2
25^°C
1.0
7
5
Tc=
--25^°C
75^°C
3
2
0.1
7
5
3
2
0.01
0.01
1000
7
5
23
5 7 _0.1 2 3 5 7 _1.0
Drain Current, ID -- A
SW Time -- ID
2 3 5 7 ₁₀
IT16205
VDD=200V
VGS=10V
3
2
100
7
5
3
2
10
0.1
tf
td(off)
tr
td(on)
23
5 7 _1.0
23
Drain Current, ID -- A
5 7 ₁₀
IT16207
2
0
0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
--50
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0
1000
7
5
3
2
2
4
6
8
10
12
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Tc
IT16202
Single pulse
V GS=10V, ^{I D=2.75A}
--25
0
25
50
75 100 125 150
Case Temperature, Tc -- °C
IT16204
IS -- VSD
VGS=0V
Single pulse
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Diode Forward Voltage, VSD -- V IT16206
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
100
Coss
7
5
3
2
Crss
10
0 5 10 15 20 25 30 35 40 45 50
Drain-to-Source Voltage, VDS -- V IT16208
No. A1903-3/7