ATP613 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Ordering number : ENA1903A
ATP613
N-Channel Power MOSFET
500V, 5.5A, 2Ω, ATPAK
http://onsemi.com
Features
• _{Reverse recovery time trr=60ns(typ.)}
• _{Input Capacitance Ciss=350pF(typ.)}
• _{Halogen free compliance}
• _{ON-resistance RDS(on)=1.55Ω(typ.)}
• _{10V drive}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
VDSS
Gate-to-Source Voltage
Drain Current (DC)
VGSS
ID
Drain Current (Pulse)
IDP
Source-to-Drain Diode Forward Current (DC) IS
Source-to-Drain Diode Forward Current (Pulse) ISP
Allowable Power Dissipation
PD
Channel Temperature
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
EAS
Avalanche Current *2
IAV
Note :*1 VDD=99V, L=5mH, IAV=5.5A (Fig.1)
*2 L≤5mH, Single pulse
Conditions
PW≤10μs, duty cycle≤1%
PW≤10μs, duty cycle≤1%
Tc=25°C
Ratings
Unit
500
V
±30
V
5.5
A
19
A
5.5
A
19
A
70
W
150
°C
--55 to +150
°C
93 mJ
5.5
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7057-001
6.5
4
1.5
0.4
ATP613-TL-H
4.6
2.6
0.4
Product & Package Information
• Package
: ATPAK
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
TL
Marking
ATP613
LOT No.
2
1
3
0.8
0.6
2.3 2.3
0.55
0.4
1 : Gate
2 : Drain
3 : Source
4 : Drain
ATPAK
Electrical Connection
2,4
1
3
Semiconductor Components Industries, LLC, 2013
July, 2013
D2612 TKIM TC-00002855/D1510QB TKIM TC-00002545 No. A1903-1/7