ATP613 Datasheet, PDF (2/7 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

ATP613
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
trr
Qrr
Conditions
ID=10mA, VGS=0V
VDS=400V, VGS=0V
VGS=±30V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=2.75A
ID=2.75A, VGS=10V
VDS=30V, f=1MHz
See Fig.2
VDS=200V, VGS=10V, ID=5.5A
IS=5.5A, VGS=0V
See Fig.3
IS=5.5A, VGS=0V, di/dt=100A/μs
Ratings
Unit
min
typ
max
500
V
100
μA
±100 nA
3
5
V
1.5
2.9
S
1.55
2.0
Ω
350
pF
68
pF
15
pF
14.2
ns
46
ns
37.6
ns
20.4
ns
13.8
nC
3.2
nC
7.6
nC
1.1
1.5
V
60
ns
120
nC
Fig.1 Unclamped Inductive Switching Test Circuit
Fig.2 Switching Time Test Circuit
D
L
≥50Ω
RG _G
VIN
10V
0V
VIN
VDD=200V
ID=2.75A
RL=71Ω
S ^ATP613
PW≤10μs
D
VOUT
10V
0V
50Ω
VDD
D.C.≤1%
G
S _ATP613
P.G
50Ω
Fig.3 Reverse Recovery Time Test Circuit
D
ATP613
G
S
500μH
VDD=50V
Driver MOSFET
Ordering Information
Device
ATP613-TL-H
Package
ATPAK
Shipping
3,000pcs./reel
memo
Pb Free and Halogen Free
No. A1903-2/7