ATP401 Datasheet, PDF (3/7 Pages) ON Semiconductor – N-Channel Power MOSFET

ATP401
ID -- VDS
200
Tc=25°C
180
160
140
120
100
80
60
VGS=3V
40
20
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Drain-to-Source Voltage, VDS -- V IT17002
RDS(on) -- VGS
10
200
VDS=10V
180
ID -- VGS(off)
160
140
120
100
80
60
40
20
25^°C
0
0
1
2
3
4
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Tc
10
5
IT17003
8
8
6
4
75°C
25°C
Tc= --25°C
2
ID=50A
Single pulse
0
0
3
4
5
6
7
8
Gate-to-Source Voltage, VGS -- V
| yfs | -- ID
3
2 ^VDS=10V
9
10
IT17004
100
7
5
3
2
10
7
5
3
2
1.0
0
5
3
2
25^°C
Tc=
--25^°C
75^°C
2 3 5 7 _1.0 2 3 5 7 ₁₀ 2 3 5 7 ₁₀₀
Drain Current, ID -- A
IT17006
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
10K
7
5
3
2
1K
7
5
100
0
Coss
Crss
5
10
15
20
25
30
Drain-to-Source Voltage, VDS -- V IT17008
6
4
VVGGS=S=4.150VV,,IIDD==5500AA
2
Single pulse
0
--50 --25 0
25
50
75 100
Case Temperature, Tc -- °C
5
3
2
VGS=0V
Single pulse
100
7
5
3
2
IS -- VSD
125 150
IT17005
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Forward Drain to Source Voltage, VSD -- V IT17007
Qg -- VGS
10
VDS=36V
9 _ID=100A
8
7
6
5
4
3
2
1
0
0
50
100
150
200
250
300
Total Gate Charge, Qg -- nC
IT17009
No. A2167-3/7