ATP401 Datasheet, PDF (2/7 Pages) ON Semiconductor – N-Channel Power MOSFET

ATP401
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=1mA, VGS=0V
VDS=60V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=50A
ID=50A, VGS=10V
ID=50A, VGS=4.5V
VDS=20V, f=1MHz
See Fig.2
VDS=36V, VGS=10V, ID=100A
IS=100A, VGS=0V
Ratings
Unit
min
typ
max
60
V
10
μA
±10
μA
1.2
2.6
V
90
S
2.8
3.7 mΩ
3.7
5.2 mΩ
17000
pF
1000
pF
770
pF
110
ns
580
ns
840
ns
710
ns
300
nC
60
nC
60
nC
0.9
1.2
V
Fig.1 Unclamped Inductive Switching Test Circuit
D
L
≥50Ω _G
10V
0V
50Ω
S
VDD
ATP401
Fig.2 Switching Time Test Circuit
VIN
10V
0V
VIN
PW≤10μs
D.C.≤1%
G
VDD=36V
ID=50A
RL=0.72Ω
D
VOUT
P.G
50Ω
S
ATP401
Ordering Information
Device
ATP401-TL-H
Package
ATPAK
Shipping
3,000pcs./reel
memo
Pb Free and Halogen Free
No. A2167-2/7