ATP401 Datasheet, PDF (1/7 Pages) ON Semiconductor – N-Channel Power MOSFET

Ordering number : ENA2167
ATP401
N-Channel Power MOSFET
60V, 100A, 3.7mΩ, ATPAK
http://onsemi.com
Features
• _{ON-resistance RDS(on)1=2.8mΩ(typ)}
• _{4.5V Drive}
• _{Input Capasitance Ciss=17000pF(typ)}
• _{Halogen free compliance}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
EAS
Avalanche Current *2
IAV
*1 VDD=36V, L=100μH, IAV=70A(Fig.1)
*2 L≤100μH, Single pulse
Conditions
PW≤10μs, duty cycle≤1%
Tc=25°C
Ratings
Unit
60
V
±20
V
100
A
400
A
90
W
150
°C
--55 to +150
°C
549 mJ
70
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7057-001
6.5
4
1.5
0.4
ATP401-TL-H
4.6
2.6
0.4
Product & Package Information
• Package
: ATPAK
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
TL
Marking
ATP401
LOT No.
2
1
3
0.8
0.6
2.3 2.3
0.55
0.4
1 : Gate
2 : Drain
3 : Source
4 : Drain
ATPAK
Electrical Connection
2,4
1
3
Semiconductor Components Industries, LLC, 2013
July, 2013
12313 TKIM TC-00002868 No. A2167-1/7