2N5087_07 Datasheet, PDF (3/7 Pages) ON Semiconductor – Amplifier Transistor PNP Silicon

2N5087
TYPICAL NOISE CHARACTERISTICS
(V_CE = −5.0 Vdc, T_A = 25°C)
10
7.0
5.0
3.0
2.0 ^{1.0 mA}
I_C = 10 mA
30 mA
100 mA
300 mA
BANDWIDTH = 1.0 Hz
R_S ≈ 0
1.0
10 20
50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
f, FREQUENCY (Hz)
Figure 1. Noise Voltage
1.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
10 20
I_C = 1.0 mA
BANDWIDTH = 1.0 Hz
R_S ≈ ∞
300 mA
100 mA
30 mA
10 mA
50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
f, FREQUENCY (Hz)
Figure 2. Noise Current
1.0 M
500 k
200 k
100 k
50 k
20 k
10 k
5.0 k
2.0 k
1.0 k
500
200
100
10
BANDWIDTH = 1.0 Hz
1.0 M
500 k
200 k
100 k
50 k
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
20 30 50 70 100 200 300 500 700 1.0 k
I_C, COLLECTOR CURRENT (mA)
20 k
10 k
5.0 k
2.0 k
1.0 k
500
200
100
10
Figure 3. Narrow Band, 100 Hz
BANDWIDTH = 1.0 Hz
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
20 30 50 70 100
200 300 500 700 1.0 k
I_C, COLLECTOR CURRENT (mA)
Figure 4. Narrow Band, 1.0 kHz
1.0 M
500 k
200 k
100 k
50 k
20 k
10 k
5.0 k
2.0 k
1.0 k
500
200
100
10
10 Hz to 15.7 kHz
Noise Figure is Defined as:
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
ƪ ƫ NF + 20 log10
en2 ) 4KTRS ) In ^2RS2
4KTRS
1ń2
e_n = Noise Voltage of the Transistor referred to the input. (Figure 3)
I_n = Noise Current of the Transistor referred to the input. (Figure 4)
K = Boltzman’s Constant (1.38 x 10^−23 j/°K)
T = Temperature of the Source Resistance (°K)
R_S = Source Resistance (Ohms)
20 30 50 70 100 200 300 500 700 1.0 k
I_C, COLLECTOR CURRENT (mA)
Figure 5. Wideband
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