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2N5087_07 Datasheet, PDF (2/7 Pages) ON Semiconductor – Amplifier Transistor PNP Silicon
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2N5087
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
V(BR)CEO
Vdc
(IC = 1.0 mAdc, IB = 0)
50
−
Collector−Base Breakdown Voltage
V(BR)CBO
Vdc
(IC = 100 mAdc, IE = 0)
50
−
Collector Cutoff Current
(VCB = 35 Vdc, IE = 0)
ICBO
nAdc
−
50
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
IEBO
nAdc
−
50
ON CHARACTERISTICS
DC Current Gain
hFE
(IC = 100 mAdc, VCE = 5.0 Vdc)
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc) (Note 1)
−
250
800
250
−
250
−
Collector−Emitter Saturation Voltage
VCE(sat)
Vdc
(IC = 10 mAdc, IB = 1.0 mAdc)
−
0.3
Base−Emitter On Voltage
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
VBE(on)
Vdc
−
0.85
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
fT
(IC = 500 mAdc, VCE = 5.0 Vdc, f = 20 MHz)
MHz
40
−
Collector−Base Capacitance
Ccb
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
pF
−
4.0
Small−Signal Current Gain
hfe
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
−
250
900
Noise Figure
NF
(IC = 20 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz)
(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 3.0 kW, f = 1.0 kHz)
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
dB
−
2.0
−
2.0
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