 English |
|
|
|
|
|
|
|
| PZT651T1G Datasheet, PDF (2/4 Pages) ON Semiconductor – NPN Silicon Planar Epitaxial Transistor | |||
| |||
| ◁ |
PZT651T1G
ELECTRICAL CHARACTERISTICS (TA = 25ï°C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Collector--Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
Collector--Emitter Breakdown Voltage
(IC = 100 mAdc, IE = 0)
Emitter--Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Base--Emitter Cutoff Current
(VEB = 4.0 Vdc)
Collector--Base Cutoff Current
(VCB = 80 Vdc, IE = 0)
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 50 mAdc, VCE = 2.0 Vdc)
(IC = 500 mAdc, VCE = 2.0 Vdc)
(IC = 1.0 Adc, VCE = 2.0 Vdc)
(IC = 2.0 Adc, VCE = 2.0 Vdc)
Collector--Emitter Saturation Voltages
(IC = 2.0 Adc, IB = 200 mAdc)
(IC = 1.0 Adc, IB = 100 mAdc)
Base--Emitter Voltages
(IC = 1.0 Adc, VCE = 2.0 Vdc)
Base--Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 100 mAdc)
Current--Gain â Bandwidth
(IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
2. Pulse Test: Pulse Width ï£ 300 ms, Duty Cycle = 2.0%
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
IEBO
ICBO
hFE
VCE(sat)
VBE(on)
VBE(sat)
fT
Min
Max
Unit
60
--
Vdc
80
--
Vdc
5.0
--
Vdc
--
0.1
mAdc
--
100
nAdc
--
75
--
75
--
75
--
40
--
Vdc
--
0.5
--
0.3
--
1.0
Vdc
--
1.2
Vdc
75
--
MHz
ORDERING INFORMATION
Device
Package
Shippingâ
PZT651T1G
SOT--223
(Pb--Free)
1000 / Tape and Reel
â For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese