PACDN1408CG Datasheet, PDF (2/5 Pages) ON Semiconductor – ESD Protection Arrays in Chip Scale Package

PACDN1404
PACKAGE / PINOUT DIAGRAMS
Orientation
Marking
A
B
Top View
(Bumps Down View)
123
+
D14
Bottom View
(Bumps Up View)
B1 B2 B3
A1 A2 A3
PACDN1404
6−Bump WLCSP Package
Orientation
Marking
1
A⁺
B
Top View
(Bumps Down View)
2345
DN1408
Bottom View
(Bumps Up View)
B1 B2 B3 B4 B5
A1 A2 A3 A4 A5
PACDN1408
10−Bump WLCSP Package
SPECIFICATIONS
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameter
Rating
Units
Storage Temperature Range
−65 to +150
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 2. STANDARD OPERATING CONDITIONS
Parameter
Operating Temperature Range
Rating
−40 to +85
Units
C
Table 3. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Symbol
Parameter
Conditions
Min
Typ
Max
V_REV
I_LEAK
V_SIG
Reverse Standoff Voltage
Leakage Current
Signal Clamp Voltage
Positive Clamp
Negative Clamp
I_DIODE = 10 mA
V_IN = 3.3 V DC
I_LOAD = 10 mA
5.5
100
5.6
6.8
8.0
−1.2 −0.8 −0.4
V_ESD
In−system ESD Withstand Voltage
(Note 2)
a) Human Body Model, MIL−STD−883,
30
Method 3015
b) Contact Discharge per
25
IEC 61000−4−2 Level 4
V_CL
Clamping Voltage during ESD Discharge (Note 2)
MIL−STD−883 (Method 3015), 8 kV
Positive Transients
+12
Negative Transients
−8
C
Channel Capacitance
At 2.5 V DC, f = 1 MHz
39
47
1. T_A = 25C unless otherwise specified. GND in this document refers to the lower supply voltage.
2. ESD applied to channel pins with respect to GND, one at a time. All other channels are open. All GND pins tied to ground.
Units
V
nA
V
kV
V
pF
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