MMBF4391LT1_06 Datasheet, PDF (2/6 Pages) ON Semiconductor – JFET Switching Transistors N-Channel

MMBF4391LT1, MMBF4392LT1, MMBF4393LT1
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate−Source Breakdown Voltage
(I_G = 1.0 mAdc, V_DS = 0)
Gate Reverse Current
(V_GS = 15 Vdc, V_DS = 0, T_A = 25°C)
(V_GS = 15 Vdc, V_DS = 0, T_A = 100°C)
Gate−Source Cutoff Voltage
(V_DS = 15 Vdc, I_D = 10 nAdc)
MMBF4391LT1
MMBF4392LT1
MMBF4393LT1
Off−State Drain Current
(V_DS = 15 Vdc, V_GS = −12 Vdc)
(V_DS = 15 Vdc, V_GS = −12 Vdc, T_A = 100°C)
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current
(V_DS = 15 Vdc, V_GS = 0)
MMBF4391LT1
MMBF4392LT1
MMBF4393LT1
Drain−Source On−Voltage
(I_D = 12 mAdc, V_GS = 0)
(I_D = 6.0 mAdc, V_GS = 0)
(I_D = 3.0 mAdc, V_GS = 0)
Static Drain−Source On−Resistance
(I_D = 1.0 mAdc, V_GS = 0)
MMBF4391LT1
MMBF4392LT1
MMBF4393LT1
MMBF4391LT1
MMBF4392LT1
MMBF4393LT1
SMALL− SIGNAL CHARACTERISTICS
Input Capacitance
(V_DS = 15 Vdc, V_GS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(V_DS = 0, V_GS = 12 Vdc, f = 1.0 MHz)
Symbol
V_(BR)GSS
I_GSS
V_GS(off)
I_D(off)
I_DSS
V_DS(on)
r_DS(on)
C_iss
C_rss
Min
30
−
−
−4.0
−2.0
−0.5
−
−
50
25
5.0
−
−
−
−
−
−
−
−
Max
Unit
−
Vdc
1.0
0.20
−10
−5.0
−3.0
1.0
1.0
150
75
30
0.4
0.4
0.4
30
60
100
14
3.5
nAdc
mAdc
Vdc
nAdc
mAdc
mAdc
Vdc
W
pF
pF
ORDERING INFORMATION
Device
Marking
Package
Shipping^†
MMBF4391LT1
6J
SOT−23
MMBF4391LT1G
6J
SOT−23
(Pb−Free)
MMBF4392LT1
MMBF4392LT1G
6K
SOT−23
6K
SOT−23
(Pb−Free)
3000 / Tape & Reel
MMBF4393LT1
6G
SOT−23
MMBF4393LT1G
6G
SOT−23
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
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