MMBF4391LT1_06 Datasheet, PDF (1/6 Pages) ON Semiconductor – JFET Switching Transistors N-Channel

MMBF4391LT1,
MMBF4392LT1,
MMBF4393LT1
JFET Switching Transistors
N−Channel
Features
• Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Drain−Source Voltage
V_DS
30
Vdc
Drain−Gate Voltage
V_DG
30
Vdc
Gate−Source Voltage
V_GS
30
Vdc
Forward Gate Current
I_G(f)
50
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board
P_D
(Note 1) T_A = 25°C
225
mW
Derate above 25°C
1.8
mW/°C
Thermal Resistance, Junction−to−Ambient R_qJA
556
°C/W
Junction and Storage Temperature Range T_J, T_stg −55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0  0.75  0.062 in.
http://onsemi.com
2 SOURCE
3
GATE
1 DRAIN
3
1
2
SOT−23
CASE 318
STYLE 10
MARKING DIAGRAM
6x M G
G
1
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 5
6x = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
DEVICE MARKING INFORMATION
See general marking information in the device marking
section on page 2 of this data sheet.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
1
Publication Order Number:
MMBF4391LT1/D