CAT64LC40 Datasheet, PDF (2/12 Pages) ON Semiconductor – 4 kb SPI Serial EEPROM

CAT64LC40
PIN CONNECTIONS
CS ¹
SK ²
DI ³
DO ⁴
8
V_CC
7 _RDY/BUSY
6 _RESET
5 _GND
PDIP−8 (P, L)
RDY/BUSY
V_CC
CS
SK
1
8
RESET
2
7
GND
3
6
DO
4
5
DI
SOIC−8 (J, W)
CS
1
8
SK
2
7
DI
3
6
DO
4
5
SOIC−8 (S, V)
V_CC
RDY/BUSY
RESET
GND
CS 1
SK 2
DI 3
DO 4
8 V_CC
7 _RDY/BUSY
6 RESET
5 GND
TSSOP−8 (U, Y)
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameters
Ratings
Unit
Temperature Under Bias
−55 to +125
°C
Storage Temperature
−65 to +150
°C
Voltage on any Pin with Respect to Ground (Note 1)
V_CC with Respect to Ground
Package Power Dissipation Capability (T_A = 25°C)
Lead Soldering Temperature (10 secs)
−2.0 to +V_CC +2.0
V
−2.0 to +7.0
V
1.0
W
300
°C
Output Short Circuit Current (Note 2)
100
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The minimum DC input voltage is −0.5 V. During transitions, inputs may undershoot to −2.0 V for periods of less than 20 ns. Maximum DC
voltage on output pins is V_CC + 0.5 V, which may overshoot to V_CC + 2.0 V for periods of less than 20 ns.
2. Output shorted for no more than one second. No more than one output shorted at a time.
Table 2. RELIABILITY CHARACTERISTICS
Symbol
Parameter
Min
Max
N_END (Note 3)
Endurance
1,000,000
T_DR (Note 3)
Data Retention
100
V_ZAP (Note 3)
ESD Susceptibility
2000
I_LTH (Notes 3 and 4) Latch−Up
100
3. This parameter is tested initially and after a design or process change that affects the parameter.
4. Latch−up protection is provided for stresses up to 100 mA on address and data pins from −1 V to V_CC +1 V.
Table 3. CAPACITANCE (T_A = 25°C, f = 1.0 MHz, V_CC = 6.0 V)
Symbol
Test
Conditions
Max
C_I/O (Note 5)
Input/Output Capacitance (DO, RDY/BSY)
V_I/O = 0 V
8
C_IN (Note 5)
Input Capacitance (CS, SK, DI, RESET)
V_IN = 0 V
6
5. This parameter is tested initially and after a design or process change that affects the parameter.
Units
Cycles/Byte
Years
V
mA
Units
pF
pF
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