2SD1060 Datasheet, PDF (2/4 Pages) Unisonic Technologies – NPN EPITAXIAL PLANAR SILICON TRANSISTOR

Electrical Characteristics at Ta=25°C
2SD1060
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
Symbol
Conditions
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=40V, IE=0A
VEB=4V, IC=0A
VCE=2V, IC=1A
VCE=2V, IC=2A
VCE=5V, IC=1A
VCB=10V, f=1MHz
IC=3A, IB=0.3A
IC=1mA, IE=0A
IC=1mA, RBE=∞
IE=1mA, IC=0A
See specified Test Circuit
* : The 2SD1060 is classified by 1A hFE as follows
Rank
R
S
hFE
100 to 200
140 to 280
Switching Time Test Circuit
IB1
PW=20μs
D.C.≤1%
IB2
INPUT
VR
RB
50Ω
+
100μF
VBE= --5V
IC=10IB1= --10IB2=2A
OUTPUT
RL=
10Ω
+
470μF
VCC=20V
Ratings
min
typ
100*
80
30
100
60
50
6
0.1
1.4
0.2
max
0.1
0.1
280*
0.3
Unit
mA
mA
MHz
pF
V
V
V
V
μs
μs
μs
IC -- VCE
10
400m3A50m3A00m2A50mA 200mA
8
150mA
100mA
6
50mA
4
2
0
IB=0mA
0
0.4
0.8
1.2
1.6
2.0
2.4
Collector-to-Emitter Voltage, VCE -- V ITR08436
IC -- VBE
10
VCE=2V
9
8
7
6
5
4
3
2
1
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Base-to-Emitter Voltage, VBE -- V ITR08438
No.686-2/4