2SD1060 Datasheet, PDF (1/4 Pages) Unisonic Technologies – NPN EPITAXIAL PLANAR SILICON TRANSISTOR

Ordering number : EN686K
2SD1060
Bipolar Transistor
50V, 5A, Low VCE(sat) NPN TO-220-3L
http://onsemi.com
Applications
• _{Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching}
Features
• _{Low collector-to-emitter saturation voltage : VCE(sat)=0.3V max / IC=3A, IB= 0.3A}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25°C
Conditions
Ratings
Unit
60
V
50
V
6
V
5
A
9
A
1.75
W
30
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7536-002
10.0
3.6
(0.6)
4.5
1.3
8.9 MAX
1.52
1.27
0.8
0.5
Product & Package Information
• Package
: TO-220-3L
• JEITA, JEDEC : SC-46, TO-220AB
• Minimum Packing Quantity : 50 pcs./magazine
Marking
Electrical Connection
2
D1060
Rank LOT No.
1
3
123
2.54
2.54
1 : Base
2 : Collector
3 : Emitter
TO-220-3L
Semiconductor Components Industries, LLC, 2013
September, 2013
40412 TKIM TC-00002737/82207FA TIIM TC-00000844/913003TN(KT)/91098HA(KT)/D251MH/4017KI No.686-1/4