MSM56V16160D Datasheet, PDF (17/30 Pages) OKI electronic componets – 2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM

¡ Semiconductor
MSM56V16160D/DH
,

,,
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 ^{Bank Interleave Page Read Cycle @ CAS Latency = 2, Burst Length = 4}
CLK
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
High
CKE
*Note1
CS
RAS
CAS
,
,
^ADDR
RAa
A11
A10
RAa
DQ
WE
CAa
RBb
CBb
CAc
CBd
CAe
RAa
QAa0 QAa1 QAa2 QAa3 QBb0 QBb1 QBb2 QBb3 QAc0 QAc1 QBd0 QBd1 QAe0 QAe1
l_ROH
UDQM,
LDQM
  RowActive
(A-Bank)
Row Active
(B-Bank)
Read Command
(A-Bank)
Read Command
(B-Bank)
Read Command
(B-Bank)
Precharge Command
(A-Bank)
Read Command
(A-Bank)
Read Command
(A-Bank)
*Note: 1. CS is ignored when RAS, CAS and WE are high at the same cycle.
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