MSM56V16160D Datasheet, PDF (1/30 Pages) OKI electronic componets – 2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM

E2G1049-18-33
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MSM56V16160D/DH
2-Bank ¥ 524,288-Word ¥ 16-Bit SYNCHRONOUS DYNAMIC RAM
DESCRIPTION
The MSM56V16160D/DH is a 2-bank ¥ 524,288-word ¥ 16-bit synchronous dynamic RAM,
fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The
inputs and outputs are LVTTL compatible.
FEATURES
• Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell
• 2-bank ¥ 524,288-word ¥ 16-bit configuration
• 3.3 V power supply, ±0.3 V tolerance
• Input : LVTTL compatible
• Output : LVTTL compatible
• Refresh : 4096 cycles/64 ms
• Programmable data transfer mode
– CAS latency (1, 2, 3)
– CAS latency (2, 3)*¹
– Burst length (1, 2, 4, 8, full page)
– Burst length (1, 2, 4, 8)*¹
– Data scramble (sequential, interleave)
*¹ : H version only.
• CBR auto-refresh, Self-refresh capability
• Package:
50-pin 400 mil plastic TSOP (Type II) (TSOPII50-P-400-0.80-K) (Product : MSM56V16160D/DH-xxTS-K)
xx indicates speed rank.
PRODUCT FAMILY
Family
MSM56V16160D-10
MSM56V16160D-12
MSM56V16160DH-15
Max.
Frequency
100 MHz
83 MHz
66 MHz
Access Time (Max.)
t_AC2
9 ns
t_AC3
9 ns
14 ns
10 ns
9 ns
9 ns
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