PSMN6R5-25YLC Datasheet, PDF (9/15 Pages) NXP Semiconductors – N-channel 25 V 6.5 mΩ logic level MOSFET in LFPAK using NextPower technology

NXP Semiconductors
PSMN6R5-25YLC
N-channel 25 V 6.5 mΩ logic level MOSFET in LFPAK using NextPower technology
20
R_DSon
(mΩ)
16
2.8 3.0
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V_GS(V) = 3.5
12
8
4.5
5.0
10
4
0
0
20
40
60
80
100
I_D (A)
2
a
1.5
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4.5V
V_GS =10V
1
0.5
0
-60
0
60
120
180
T_j (DC)
Fig 12. Drain-source on-state resistance as a function Fig 13. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
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10
V_GS
(V)
8
6
4
2
0
0
20V
5V
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V_DS= 12V
5
10
15
20
Q_G (nC)
Fig 14. Gate charge waveform definitions
Fig 15. Gate-source voltage as a function of gate
charge; typical values
PSMN6R5-25YLC
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 12 July 2011
© NXP B.V. 2011. All rights reserved.
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